Title :
Accumulation-mode MOS varactor modeling for RF applications valid up to 40GHz
Author :
Hu, Jiawei ; Li, Zhiqun ; Li, Qin ; Li, Wei ; Zhang, Li
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing, China
Abstract :
This paper presented a RF model of an accumulation-mode MOS varactor for RF applications. Based on this model, simple and continuous equation has been used for describing the characteristics of the device in all operation regions. With a single topology composed of lumped elements, this model can be easily used in commercial circuit simulators. Based on S-parameter measurement, excellent agreement was obtained between measured data and model up to 40 GHz.
Keywords :
MOS capacitors; varactors; RF application; RF model; S-parameter measurement; accumulation-mode MOS varactor modeling; commercial circuit simulator; continuous equation; lumped elements; Circuit simulation; Equations; Equivalent circuits; Fingers; Integrated circuit modeling; Parasitic capacitance; Radio frequency; Semiconductor device modeling; Varactors; Voltage;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5525166
