Title :
Solid state mass memories
Author_Institution :
CEA/DLETI, Grenoble, France
Abstract :
Summary form only given. Rather than using the reversability of a magnetic memory cell, it is becoming necessary to develop a mass storage device with a very fast access time and a high execution speed, to the detriment of long-period storage. The purpose is to store 2-10 MB over more than 30-day periods. This type of memory shows dynamic characteristics similar to those of semiconductor memories. Three technologies that can be foreseen are discussed: (1) higher-capacity static RAMs with associated or hybrid batteries, (2) a DRAM-type memory cell, connecting a transistor to a condenser, and (3) Bloch line memory, a continued evolution of magnetic-bubble memories
Keywords :
magnetic bubble memories; random-access storage; 2 to 10 MB; Bloch line memory; DRAM-type memory cell; condenser; hybrid batteries; magnetic memory cell; magnetic-bubble memories; mass storage device; semiconductor memories; solid state mass memories; static RAMs; transistor; Batteries; Costs; Data processing; EPROM; Image processing; Image storage; Magnetic analysis; Random access memory; Solid state circuits; TV;
Conference_Titel :
CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.
Conference_Location :
Hamburg
Print_ISBN :
0-8186-1940-6
DOI :
10.1109/CMPEUR.1989.93333
