DocumentCode :
3236196
Title :
IGBT and diode loss measurements in pulsed power operating conditions
Author :
Huang, C. ; Melcher, P. ; Ferguson, G. ; Ness, R.
Author_Institution :
Cymer, Inc., San Diego, CA
fYear :
2004
fDate :
23-26 May 2004
Firstpage :
170
Lastpage :
173
Abstract :
High voltage IGBTs and series diodes are used in Cymer´s solid-state pulsed power commutator module. The IGBTs and series diode losses in the module affect the cooling system design and the energy transfer efficiency. It is difficult to estimate the IGBT and diode losses in the pulsed power operating condition. We have previously tried to measure the IGBT losses by measuring the voltage across the IGBT (using a high voltage differential probe) and the current through the IGBT. Since the voltage across the IGBT changes from the kilo-volt level to several volts, it is very difficult to measure the small on-state voltage accurately. Also very small internal package inductance can obscure the voltage measurement due to the high dl/dt level in the circuit. In this work, the IGBT and series diode losses were measured with a commutator module directly by measuring the water flow rate going through a cold-plate attached to the IGBT or diode and the temperature difference of the inlet and outlet water. Heat transfer through other means, such as free convection, was minimized by sealing the IGBT/diode inside a thermal isolation blanket and polyurethane foam. The loss measurement results on the dual package IGBT and dual package diode are presented in the paper
Keywords :
cooling; insulated gate bipolar transistors; loss measurement; power semiconductor diodes; pulsed power technology; cooling system design; diode loss measurements; dual package IGBT; dual package diode; energy transfer; free convection; heat transfer; polyurethane foam; pulsed power operating conditions; series diodes; solid-state pulsed power commutator module; thermal isolation blanket; water flow rate; Current measurement; Diodes; Fluid flow measurement; Insulated gate bipolar transistors; Loss measurement; Packaging; Power measurement; Pulse measurements; Solid state circuits; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop. Conference Record of the Twenty-Sixth International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8586-1
Type :
conf
DOI :
10.1109/MODSYM.2004.1433535
Filename :
1433535
Link To Document :
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