• DocumentCode
    3236271
  • Title

    Hierarchical architecture for fast CMOS SRAMs

  • Author

    Schmitt-Landsiedel, D. ; Neuendorf, G. ; Hoppe, B. ; Mattausch, H.J.

  • Author_Institution
    Siemens AG, Munchen, West Germany
  • fYear
    1989
  • fDate
    8-12 May 1989
  • Firstpage
    11689
  • Lastpage
    12420
  • Abstract
    A new concept for the design of fast SRAMs is described, introducing a highly hierarchical architecture with short word and bit lines. Computational results based on layouts in a standard 1-μm technology yield a 9-ns access time for a 64 K SRAM. The authors estimate that the access time is at least 50% longer in a conventional architecture, while the area is about 30% smaller. No address transition detection circuitry or other internal timing is required for the hierarchical approach. No critical analog circuit parts are applied. The new concept shows little sensitivity with respect to technology variations and can also be used for future technology generations with reduced supply voltage
  • Keywords
    CMOS integrated circuits; memory architecture; random-access storage; 1 micron; 64 kB; 9 ns; CMOS SRAMs; access time; bit lines; hierarchical architecture; layouts; reduced supply voltage; CMOS logic circuits; CMOS process; CMOS technology; Computer architecture; Conductivity; Decoding; Delay; Random access memory; Read-write memory; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.
  • Conference_Location
    Hamburg
  • Print_ISBN
    0-8186-1940-6
  • Type

    conf

  • DOI
    10.1109/CMPEUR.1989.93338
  • Filename
    93338