• DocumentCode
    3236297
  • Title

    Anisotropic effect and negative dielectric permittivity in crystals

  • Author

    Felinskyi, S.G. ; Korotkov, P.A. ; Felinskyi, G.S.

  • Author_Institution
    Taras Shevchenko Kyiv Nat. Univ., Kiev, Ukraine
  • fYear
    2011
  • fDate
    5-9 Sept. 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Anisotropy effects on the negative dielectric permittivity (DP) formation in the frequency region near the phonon lattice vibrations are considered using three crystalline modifications of boron nitride. Quantitative data on frequency intervals and negative DP values are presented for all anisotropic modifications. It is shown that anomalous dispersion of the refractive index falls to 0 <; n <; 1 in the presence of negative DP, but always leaves n >; 1 in the absence of negative DP. The significant role of the polar vibrations damping to determination of the real limits of negative DP region is clarified, especially for crystals with symmetry lower than cubic.
  • Keywords
    III-V semiconductors; boron compounds; damping; permittivity; phonons; refractive index; wide band gap semiconductors; BN; anisotropic effect; boron nitride; negative dielectric permittivity; phonon lattice vibrations; polar vibrations damping; refractive index; Geometrical optics; Lattices; Optical polarization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on
  • Conference_Location
    Kharkov
  • ISSN
    Pending
  • Print_ISBN
    978-1-61284-811-2
  • Type

    conf

  • DOI
    10.1109/LFNM.2011.6145032
  • Filename
    6145032