DocumentCode
3236297
Title
Anisotropic effect and negative dielectric permittivity in crystals
Author
Felinskyi, S.G. ; Korotkov, P.A. ; Felinskyi, G.S.
Author_Institution
Taras Shevchenko Kyiv Nat. Univ., Kiev, Ukraine
fYear
2011
fDate
5-9 Sept. 2011
Firstpage
1
Lastpage
3
Abstract
Anisotropy effects on the negative dielectric permittivity (DP) formation in the frequency region near the phonon lattice vibrations are considered using three crystalline modifications of boron nitride. Quantitative data on frequency intervals and negative DP values are presented for all anisotropic modifications. It is shown that anomalous dispersion of the refractive index falls to 0 <; n <; 1 in the presence of negative DP, but always leaves n >; 1 in the absence of negative DP. The significant role of the polar vibrations damping to determination of the real limits of negative DP region is clarified, especially for crystals with symmetry lower than cubic.
Keywords
III-V semiconductors; boron compounds; damping; permittivity; phonons; refractive index; wide band gap semiconductors; BN; anisotropic effect; boron nitride; negative dielectric permittivity; phonon lattice vibrations; polar vibrations damping; refractive index; Geometrical optics; Lattices; Optical polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling (LFNM), 2011 11th International Conference on
Conference_Location
Kharkov
ISSN
Pending
Print_ISBN
978-1-61284-811-2
Type
conf
DOI
10.1109/LFNM.2011.6145032
Filename
6145032
Link To Document