A SOI-CMOS micro-power first-order sigma-delta modulator

The low-power and high-temperature potentials of SOI have been used to design a ΣΔ modulator that achieves performances hard to obtain in bulk technology. From this first study, we estimate that further improvements based on the use of a technology with lower transistor size and lower threshold voltage, together with higher-order loop filters and higher OSR could boost the precision and further reduce the power dissipation, for the same signal bandwidth. The potential of FD SOI in high-temperature data conversion has also been demonstrated