Title :
A monolithic 3D fully-differential CMOS accelerometer
Author :
Tsai, Ming-Han ; Sun, Chih-Ming ; Wang, Chuanwei ; Lu, Jrhoung ; Weileun Fang
Author_Institution :
Nano Eng. & Micro Syst. Inst, Nat. Tsing Hua Univ., Hsinchu
Abstract :
This study presents a novel inertia sensor design to monolithic integrate x, y, and z-axis accelerometers on a single chip. The chip is implemented using the TSMC 0.35 mum 2P4M CMOS process, and post metal wet-etching and dielectric dry-etching processes. Thus, the fully-differential capacitance sensing in-plane and out-plane CMOS accelerometers are realized. The measurement results demonstrate the sensitivities for in-plane and out-of-plane accelerometers are 3.9 mV/G and 0.9 mV/G, respectively. The coupling ratios for in-plane and out-plane accelerometer are 3~5% and 15~30%, respectively.
Keywords :
CMOS integrated circuits; accelerometers; capacitance; integrated circuit design; micromechanical devices; microprocessor chips; monolithic integrated circuits; CMOS process; capacitance sensing; dielectric dry-etching; in-plane accelerometer; inertia sensor design; metal wet-etching; monolithic 3D fully-differential CMOS accelerometer; out-of-plane accelerometer; single chip; size 0.35 mum; Accelerometers; CMOS process; CMOS technology; Capacitance; Electrodes; Fabrication; Micromachining; Micromechanical devices; Monolithic integrated circuits; Springs; 3D; Accelerometer; CMOS; fully-differential;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
DOI :
10.1109/NEMS.2008.4484503