• DocumentCode
    3236522
  • Title

    A monolithic 3D fully-differential CMOS accelerometer

  • Author

    Tsai, Ming-Han ; Sun, Chih-Ming ; Wang, Chuanwei ; Lu, Jrhoung ; Weileun Fang

  • Author_Institution
    Nano Eng. & Micro Syst. Inst, Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2008
  • fDate
    6-9 Jan. 2008
  • Firstpage
    1067
  • Lastpage
    1070
  • Abstract
    This study presents a novel inertia sensor design to monolithic integrate x, y, and z-axis accelerometers on a single chip. The chip is implemented using the TSMC 0.35 mum 2P4M CMOS process, and post metal wet-etching and dielectric dry-etching processes. Thus, the fully-differential capacitance sensing in-plane and out-plane CMOS accelerometers are realized. The measurement results demonstrate the sensitivities for in-plane and out-of-plane accelerometers are 3.9 mV/G and 0.9 mV/G, respectively. The coupling ratios for in-plane and out-plane accelerometer are 3~5% and 15~30%, respectively.
  • Keywords
    CMOS integrated circuits; accelerometers; capacitance; integrated circuit design; micromechanical devices; microprocessor chips; monolithic integrated circuits; CMOS process; capacitance sensing; dielectric dry-etching; in-plane accelerometer; inertia sensor design; metal wet-etching; monolithic 3D fully-differential CMOS accelerometer; out-of-plane accelerometer; single chip; size 0.35 mum; Accelerometers; CMOS process; CMOS technology; Capacitance; Electrodes; Fabrication; Micromachining; Micromechanical devices; Monolithic integrated circuits; Springs; 3D; Accelerometer; CMOS; fully-differential;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
  • Conference_Location
    Sanya
  • Print_ISBN
    978-1-4244-1907-4
  • Electronic_ISBN
    978-1-4244-1908-1
  • Type

    conf

  • DOI
    10.1109/NEMS.2008.4484503
  • Filename
    4484503