Title :
An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)
Author :
Hefner, Allen R., Jr.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
It is shown that a nonquasi-static analysis must be used to describe the transient current and voltage waveforms of the IGBT (insulated-gate bipolar transistor). The nonquasi-static analysis is necessary because the transports of electrons and holes are coupled for the low-gain, high-level injection conditions, and because the quasi-neutral base width changes faster than the base transit speed for typical load circuit conditions. To verify that both of these nonquasi-static effects must be included, the predictions of the quasi-static and nonquasi-static models are compared with measured current and voltage switching waveforms. The comparisons are performed for different load circuit conditions and for different device base lifetimes
Keywords :
bipolar transistors; insulated gate field effect transistors; power transistors; transients; IGBT; base transit speed; current switching waveforms; load circuit conditions; nonquasi-static analysis; power insulated gate bipolar transistor; quasi-neutral base width; voltage switching waveforms; Bipolar transistors; Cathodes; Charge carrier processes; Coupling circuits; Current measurement; Insulated gate bipolar transistors; Insulation; MOSFET circuits; NIST; Voltage measurement;
Conference_Titel :
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location :
Milwaukee, WI
DOI :
10.1109/PESC.1989.48503
