Title :
A 40 GS/s SiGe track-and-hold amplifier
Author :
Li, Xiangtao ; Kuo, Wei-Min Lance ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
An ultra-high-speed SiGe track-and-hold amplifier (THA) using a switched-emitter-follower (SEF) configuration is presented. Operating off a +5.5 V power supply, this THA exhibits -32.4 dBc of total harmonic distortion (THD) when sampling a 10 GHz input signal at the rate of 40 GS/s, and reaches -50.5 dBc of THD when sampling a 2 GHz input at 12 GS/s. Compared to the THAs published in the literature with an operational range from 10 GS/s to 20 GS/s, the present THA demonstrates a THD comparable to the best one achieved to date to our knowledge for Si technology, with much improved high-frequency characteristics. On the other hand, in the operational range of 30 GS/s and above, the present SiGe THA still exhibits robust characteristics compared to the fastest THAs in terms of linearity, power consumption, and sampling rate.
Keywords :
Ge-Si alloys; amplifiers; harmonic distortion; low-power electronics; signal sampling; SiGe; frequency 10 GHz; frequency 2 GHz; power consumption; signal sampling; switched-emitter-follower configuration; total harmonic distortion; ultra high-speed track-and-hold amplifier; voltage 5.5 V; CMOS process; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Interference; Linearity; Robustness; Sampling methods; Silicon germanium; Total harmonic distortion; ADC; SiGe HBT; Silicon-Germanium (SiGe); Track-and-Hold Amplifier (THA);
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662699
