DocumentCode :
3236613
Title :
New graphical IDDQ signatures reduce defect level and yield loss
Author :
Rao, Lan ; Bushnell, Micheal L. ; Agrawal, Vishwani D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear :
2003
fDate :
4-8 Jan. 2003
Firstpage :
353
Lastpage :
360
Abstract :
The measured IDDQ current as a function of vectors is defined here as the IDDQ signature of a chip. We examined the IDDQ signatures of a large number of SEMATECH chips that have been classified as good or bad by a combined decision from functional, delay and scan tests. We find that a single IDDQ threshold, whether absolute or differential, cannot separate good/bad chips with any desirable accuracy, because the good chip signature can be any one of several well-defined graphs. In general, the signature of a good chip is found to contain, discrete levels (or bands) of varying widths and separations. A faulty chip almost always displays noise and glitches in the band structure. Based on observations, we develop a set of five graphical criteria, which provide lower defect level and yield loss compared to other non-IDDQ test methods. The reason is that the graphical procedure customizes the decision for the chip-under-test, and may substantially reduce the usage of other conventional tests.
Keywords :
CMOS integrated circuits; automatic testing; boundary scan testing; delays; integrated circuit testing; integrated circuit yield; SEMATECH chips; chip signature; chip-under-test; defect level; delay tests; discrete levels; functional tests; glitches; graphical IDDQ signatures; scan tests; yield loss; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 2003. Proceedings. 16th International Conference on
ISSN :
1063-9667
Print_ISBN :
0-7695-1868-0
Type :
conf
DOI :
10.1109/ICVD.2003.1183162
Filename :
1183162
Link To Document :
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