Title :
A 37nV/√Hz 2.5V reference based on dual-threshold JFET technology
Author :
Bowers, Derek F.
Author_Institution :
Analog Devices Inc., San Jose, CA
Abstract :
A very low-noise voltage reference is described built on a complementary bipolar process with the addition of dual-threshold P-channel JFETs. The difference between the two JFET thresholds exhibits stability and noise suitable for use as the basis of the reference. Additional circuitry amplifies and adjusts the tolerance and temperature coefficient of the threshold difference to create a 2.5 V temperature independent reference voltage capable of operating with supply voltages down to 2.7 volts.
Keywords :
junction gate field effect transistors; complementary bipolar process; dual-threshold JFET technology; very low-noise voltage reference; voltage 2.5 V; voltage 2.7 V; voltage 37 nV; Circuit noise; Circuit stability; Doping; Implants; Low voltage; Noise generators; Packaging; Temperature dependence; Temperature sensors; Threshold voltage; Silicon bipolar/JFET process technology; analog circuits; device physics; voltage references;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662702
