Title :
p-HFETs with GaAsSb channel
Author :
Tantillo, J. ; Cook, P. ; Evans, K.R. ; Martinez, M.J. ; Bobb, R. ; Martinez, E.J. ; Stutz, C.E. ; Schuermeyer, F.L.
Author_Institution :
Wright Res. & Dev. Center, Wright-Patterson AFB, OH, USA
Abstract :
The initial results on the FET characteristics of pseudomorphic GaAsSb/AlGaAs p-HFETs (heterostructure FETs) on GaAs substrates are described. Curves showing the drain current versus drain voltage, gate current versus gate voltage, transconductance, and square root of drain current versus gate voltage are shown and discussed. The data confirm the improvement in gate characteristics due to an increased valence band discontinuity. The devices showed a large source resistance due to the recessed gate process utilized and the relatively low pinch-off voltage
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; gallium compounds; GaAs substrates; GaAsSb-AlGaAs-GaAs; MBE; drain current; drain voltage; gate current; gate voltage; heterostructure FET; pinch-off voltage; pseudomorphic HFET; recessed gate process; transconductance; valence band discontinuity; CMOS technology; Circuits; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Substrates;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79849
