Study of GaAs nanowire electronic devices by using Monte Carlo method

In this paper, we study electrical properties and performance of GaAs nanowire electronic devices by using Monte Carlo method. Instead of quasi 1-D or 1-D configurations, the GaAs nanowire is regarded as 2-D configurations in our study and 2-D Monte Carlo method is developed, in which the surface roughness scattering is taken into consideration to study the size or scale effect on carrier mobility in the GaAs nanowire electronic devices, and furthermore, Try and Error method is integrated into the code to obtain their DC performance. The GaAs nanowire MOSFET, inverter and NOR gate are designed and studied, and results are presented in the paper. For GaAs nanowire MOSFET, carrier mobility in its channel would decline 40% when the diameter of the nanowire changes from 100nm to 20nm; for GaAs noanwire inverter, its I-V characteristics for different channel lengths is analyzed and logic function is proved; for GaAs nanowire NOR gate, its logic output switching characteristic is obtained as well.