Title :
On the profile design of SiGe HBTs for RF lunar applications down to 43 K
Author :
Yuan, Jiahui ; Cressler, John D. ; Cui, Yan ; Niu, Guofu ; Finn, Steven ; Joseph, Alvin
Author_Institution :
Sch. of Electron. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
New germanium and boron base profiles are designed and tested for emerging lunar RF applications down to 43 K using SiGe HBTs. Device optimization in 1st generation SiGe HBTs to minimize the carrier freezeout and to suppress the heterojunction barrier effects without changing basic fabrication processes was attempted. Optimizing the device enhances fT by 20% and fmax by 70% as compared to a standard HBT, at 43 K. A comprehensive dc and ac investigation from 43 K to 300 K was conducted to demonstrate the capabilities of these newly optimized SiGe HBTs for emerging lunar RF electronics.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; HBT; RF lunar applications; SiGe; boron; carrier freezeout; germanium; heterojunction barrier effects; lunar RF electronics; temperature 43 K to 300 K; CMOS technology; Cryogenics; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Moon; Radio frequency; Silicon germanium; Temperature; USA Councils;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662705
