DocumentCode :
3236734
Title :
Modeling of parasitic inductive effects in power modules
Author :
Falck, E. ; Stoisiek, M. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Tech. Univ. Munchen, Germany
fYear :
1997
fDate :
26-29 May 1997
Firstpage :
129
Lastpage :
132
Abstract :
Computer-assisted analysis of the dynamic behavior of the electromagnetic fields inside and outside the bus bar under realistic transient switching conditions allows us to study the details of the resulting current distribution in its interior and other related quantities (such as the heat dissipation). Hence, it proves to be an indispensable prerequisite for the systematic shape optimization of the interconnects and other structural components of a power module. Using a two-stage model for the electromagnetic fields, we tackled the switching problem by decomposing it in a Laplace equation for the quasi-stationary electric field and in a parabolic equation for the rapidly varying electromagnetic field contributions causing the eddy currents. Both equations were solved by means of finite-element methods
Keywords :
DC-AC power convertors; Laplace equations; busbars; current distribution; eddy currents; finite element analysis; modules; parabolic equations; power engineering computing; power system transients; transient analysis; DC-AC converter; Laplace equation; bus bar; computer-assisted analysis; current crowding; current distribution; dynamic behavior; eddy currents; electromagnetic fields; finite-element methods; heat dissipation; interconnect shape optimization; parabolic equation; parasitic inductive effects modeling; power modules; quasi-stationary electric field; rapidly varying electromagnetic field contributions; transient switching conditions; two-stage model; Current distribution; Distributed computing; Electromagnetic analysis; Electromagnetic fields; Electromagnetic heating; Electromagnetic transients; Laplace equations; Multichip modules; Shape; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
ISSN :
1063-6854
Print_ISBN :
0-7803-3993-2
Type :
conf
DOI :
10.1109/ISPSD.1997.601452
Filename :
601452
Link To Document :
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