Title :
Study of the ageing phenomena of the TMOS submicronic
Author :
Guenifi, N. ; Hemissi, M. ; Djahli, F. ; Mayouf, A.
Author_Institution :
Dept. of Electron., Setif, Algeria
Abstract :
In this work, we have implemented a model of the charge pumping technique in SPICE 3F4, to which we added a generator of current between drain and substrate for the measurement of the charge pumping current. This current, measured versus the different levels of the gate bias, can provide many interesting results concerning the parameters of the considered MOSFET. The simulated results are in a good agreement with recent and different experimental results
Keywords :
MOSFET; SPICE; ageing; semiconductor device models; SPICE 3F4; ageing; charge pumping model; submicron MOSFET; Aging; Charge pumps; Current measurement; Electron traps; Energy capture; Interface states; MOSFET circuits; SPICE; Silicon; Spontaneous emission;
Conference_Titel :
Electrical and Computer Engineering, 2001. Canadian Conference on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-6715-4
DOI :
10.1109/CCECE.2001.933534
