• DocumentCode
    3236762
  • Title

    Study of the ageing phenomena of the TMOS submicronic

  • Author

    Guenifi, N. ; Hemissi, M. ; Djahli, F. ; Mayouf, A.

  • Author_Institution
    Dept. of Electron., Setif, Algeria
  • Volume
    2
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    743
  • Abstract
    In this work, we have implemented a model of the charge pumping technique in SPICE 3F4, to which we added a generator of current between drain and substrate for the measurement of the charge pumping current. This current, measured versus the different levels of the gate bias, can provide many interesting results concerning the parameters of the considered MOSFET. The simulated results are in a good agreement with recent and different experimental results
  • Keywords
    MOSFET; SPICE; ageing; semiconductor device models; SPICE 3F4; ageing; charge pumping model; submicron MOSFET; Aging; Charge pumps; Current measurement; Electron traps; Energy capture; Interface states; MOSFET circuits; SPICE; Silicon; Spontaneous emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 2001. Canadian Conference on
  • Conference_Location
    Toronto, Ont.
  • ISSN
    0840-7789
  • Print_ISBN
    0-7803-6715-4
  • Type

    conf

  • DOI
    10.1109/CCECE.2001.933534
  • Filename
    933534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3236762