DocumentCode :
3236792
Title :
The combination of proton-exchange technique and electron-beam lithography for integrated waveguides
Author :
Nguyen, Minh-Hang ; Shieh, Rong-Jinn ; Chen, Zhen-Ren ; Tseng, Fan-Gang
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. TsingHua Univ., Hsinchu
fYear :
2008
fDate :
6-9 Jan. 2008
Firstpage :
1134
Lastpage :
1137
Abstract :
We proposed a new method to fabricate waveguides with low loss and reduced dimension. This method combines the conventional proton-exchange technique for long straight segments of waveguide made of Lithium Niobate and the Electron-beam (E-beam) lithography for splitting/bending points. Advantages of both techniques allow low loss of propagation in long distance, and a near-zero loss at sharp splitting/bending angle. They therefore allow reduced size of waveguides to several tens micrometers or smaller. Transmission of light with wavelength lambda0 of 632.8 nm on proton exchanged waveguides was measured. The extraction ratio between two outputs was measured as 1.03. The simulation of the photonic crystal waveguide for the replacement of light splitting part was also carried out, and demonstrated the functionality for low loss light transmission. The combined method is appropriate for many applications like waveguides, modulators, divider, etc.
Keywords :
electron beam lithography; ion exchange; light transmission; optical fabrication; optical waveguides; electron-beam lithography; integrated waveguides; light splitting; low loss light transmission; near-zero loss; photonic crystal waveguide; proton exchanged waveguides; proton-exchange technique; sharp splitting/bending angle; Integrated optics; Lithography; Optical device fabrication; Optical devices; Optical losses; Optical propagation; Optical waveguides; Photonic crystals; Propagation losses; Systems engineering and theory; E-beam; Nanostructure; Photonic crystal; Proton-exchange; Waveguide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
Conference_Location :
Sanya
Print_ISBN :
978-1-4244-1907-4
Electronic_ISBN :
978-1-4244-1908-1
Type :
conf
DOI :
10.1109/NEMS.2008.4484517
Filename :
4484517
Link To Document :
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