Title :
Forced-IE pinch-in maximum output voltage limit in SiGe HBTs operating at cryogenic temperatures
Author :
Luo, Lan ; Niu, Guofu ; Thomas, Dylan ; Yua, Jiahui ; Cressler, John D.
Author_Institution :
ECE Dept., Auburn Univ., Auburn, AL
Abstract :
We investigate the pinch-in maximum output voltage limit in SiGe HBTs operating at cryogenic temperatures. A decrease of the voltage limit is observed with cooling, and attributed to the increase of intrinsic base resistance due to freezeout as well as increase of avalanche multiplication factor (M-1).
Keywords :
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; semiconductor device testing; semiconductor materials; HBT; SiGe; avalanche multiplication factor; cryogenic temperatures; freezeout; intrinsic base resistance; pinch-in maximum output voltage limit; Cryogenics; Current density; Electronics cooling; Germanium silicon alloys; Microelectronics; Silicon germanium; Temperature; Thermal resistance; USA Councils; Voltage; Cryogenic electronics; SiGe HBTs; freezeout; instability; multiplication factor (M-1);
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662708
