DocumentCode
3236821
Title
Forced-IE pinch-in maximum output voltage limit in SiGe HBTs operating at cryogenic temperatures
Author
Luo, Lan ; Niu, Guofu ; Thomas, Dylan ; Yua, Jiahui ; Cressler, John D.
Author_Institution
ECE Dept., Auburn Univ., Auburn, AL
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
41
Lastpage
44
Abstract
We investigate the pinch-in maximum output voltage limit in SiGe HBTs operating at cryogenic temperatures. A decrease of the voltage limit is observed with cooling, and attributed to the increase of intrinsic base resistance due to freezeout as well as increase of avalanche multiplication factor (M-1).
Keywords
Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; semiconductor device testing; semiconductor materials; HBT; SiGe; avalanche multiplication factor; cryogenic temperatures; freezeout; intrinsic base resistance; pinch-in maximum output voltage limit; Cryogenics; Current density; Electronics cooling; Germanium silicon alloys; Microelectronics; Silicon germanium; Temperature; Thermal resistance; USA Councils; Voltage; Cryogenic electronics; SiGe HBTs; freezeout; instability; multiplication factor (M-1);
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location
Monteray, CA
ISSN
1088-9299
Print_ISBN
978-1-4244-2725-3
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2008.4662708
Filename
4662708
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