Title :
4H-SiC bipolar junction transistors for UHF and L-band long-pulse radar applications
Author :
Zhao, Feng ; Sudarshan, Tangali S. ; Shi, Tiefeng
Author_Institution :
Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
This paper reviews the current status of 4H-SiC RF npn bipolar junction transistors (BJT´s). Process developments including precise and uniform SiC etch and low resistance p-type ohmic contact formation on a two inch SiC wafer will be presented. The high temperature operation up to 500°C and radiation hardness up to 1.6 Mrad, as well as RF performance promising for long-pulse UHF and L-band radar applications will be reported. Rationale and approaches to the further improvement to S-band will be discussed.
Keywords :
UHF bipolar transistors; ohmic contacts; radar; silicon compounds; 4H-SiC RF npn bipolar junction transistor; 4H-SiC bipolar junction transistors; L-band long-pulse radar application; S-band; SiC wafer; UHF; p-type ohmic contact formation; L-band; Radar applications;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5525204