A 13.5-to-17 dBm P1dB, selective, high-gain power amplifier for 60 GHz applications in SiGe

Author

Glisic, Srdjan ; Scheytt, Christoph

Author_Institution

Circuit Design Dept., IHP, Frankfurt (Oder)

fYear

2008

fDate

13-15 Oct. 2008

Firstpage

65

Lastpage

68

Abstract

A fully integrated differential power amplifier (PA), produced in 0.25 mum SiGe:C BiCMOS process for 60 GHz application is presented. Differential 1 dB compression point (P1dB) at the output is 13.5 dBm at 61.5 GHz and as high as 17 dBm at 65 GHz. Saturated power is 18.7 dBm at 61.5 GHz and maximum 19 dBm at 66 GHz. PA features three-stage cascade topology with measured gain of 33 dB at 61 GHz. The amplifier is selective with 20 dB image rejection at 51 GHz, which is image frequency for the targeted transmitter architecture. Compact differential design resulted in small size of 0.6 mm² with pads. Maximum power-aided efficiency (PAE) is 7.8% for 800 mW power consumption, and 10.2% for 600 mW.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; application specific integrated circuits; cascade networks; differential amplifiers; millimetre wave integrated circuits; millimetre wave power amplifiers; radio transmitters; BiCMOS process; RF front-end; SiGe:C; differential design; frequency 51 GHz; frequency 60 GHz; frequency 61 GHz; frequency 61.5 GHz; frequency 65 GHz; frequency 66 GHz; fully integrated differential power amplifier; high-gain power amplifier; power 600 mW; power 800 mW; size 0.25 mum; three-stage cascade topology; BiCMOS integrated circuits; Differential amplifiers; Frequency; Gain measurement; Germanium silicon alloys; High power amplifiers; Power amplifiers; Silicon germanium; Topology; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE

Conference_Location

Monteray, CA

ISSN

1088-9299

Print_ISBN

978-1-4244-2725-3

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2008.4662713

Filename

4662713