Title :
Device integration of a 0.35 μm CMOS on shallow SIMOX technology for high-speed and low-power applications
Author :
Adan, A.O. ; Naka, T. ; Kaneko, S. ; Urabe, D. ; Higashi, K. ; Kagisawa, A.
Author_Institution :
VLSI Dev. Lab., Sharp Corp., Nara, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
Summary form only given. SOI based devices bring the potential of very low voltage operation at high speed as required in portable electronic systems. However, to realize the advantages of SOI MOSFETs in a commercial product (1) high-performance transistors, with (2) reproducible and good controllability need to be realized. Furthermore, (3) reliability against the environment (e.g. ESD) must be demonstrated. In this work, a high performance 0.35 μm CMOS process implemented on ultra-thin (shallow) SIMOX wafers is presented. This process is aimed at low-power, low-voltage (Vdd=l to 1.8 V) and high speed application for portable communication devices. The main considerations in the process/device design and integration are discussed and manufacturability demonstrated
Keywords :
CMOS integrated circuits; SIMOX; integrated circuit manufacture; integrated circuit technology; 0.35 micron; 1 to 1.8 V; SOI MOSFETs; SOI based devices; Si; controllability; high performance CMOS process; high-speed applications; low voltage operation; low-power applications; manufacturability; portable communication devices; reliability; shallow SIMOX technology; ultra-thin wafers; Biological system modeling; Dielectrics; Doping profiles; Electron devices; Electrostatic discharge; Humans; Integrated circuit interconnections; Power dissipation; Reliability engineering; Voltage;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552521
