Title :
A new explicit expression for the normalized hole charge improves the accuracy of HICUM/L0
Author :
Thiele, C. ; Klein, W.
Author_Institution :
Infineon Technol. AG, Neubiberg
Abstract :
In this paper a new expression for the calculation of the transfer current and the corresponding normalized hole charge in the HICUM/L0 model is presented, which leads to a significantly improved description of the collector current in the high current range and the quasi saturation and extends the validity of the HICUM/L0 from the low and medium current range to the high current range.
Keywords :
bipolar transistors; network synthesis; HICUM-L0 model; explicit expression; normalized hole charge; quasi saturation; transfer current; Bipolar transistors; Circuit simulation; Circuit synthesis; Coupling circuits; Equations; Equivalent circuits; Kirk field collapse effect; Semiconductor device modeling; Bipolar transistors; Circuit simulation; HICUM; Semiconductor device modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662716
