DocumentCode
3236957
Title
A new explicit expression for the normalized hole charge improves the accuracy of HICUM/L0
Author
Thiele, C. ; Klein, W.
Author_Institution
Infineon Technol. AG, Neubiberg
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
77
Lastpage
80
Abstract
In this paper a new expression for the calculation of the transfer current and the corresponding normalized hole charge in the HICUM/L0 model is presented, which leads to a significantly improved description of the collector current in the high current range and the quasi saturation and extends the validity of the HICUM/L0 from the low and medium current range to the high current range.
Keywords
bipolar transistors; network synthesis; HICUM-L0 model; explicit expression; normalized hole charge; quasi saturation; transfer current; Bipolar transistors; Circuit simulation; Circuit synthesis; Coupling circuits; Equations; Equivalent circuits; Kirk field collapse effect; Semiconductor device modeling; Bipolar transistors; Circuit simulation; HICUM; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location
Monteray, CA
ISSN
1088-9299
Print_ISBN
978-1-4244-2725-3
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2008.4662716
Filename
4662716
Link To Document