Title :
A determination method of worst case MOSFET model parameter using multivariate analysis
Author :
Yasuda, T. ; Kawashima, H. ; Hori, S. ; Maruyama, Y. ; Tanizawa, M. ; Yamawaki, M. ; Asai, S.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The variance of the basic circuit performance can be expressed as a linear combination of several process-oriented parameters. Therefore, we can easily estimate the variance of circuit performance with several process-oriented parameters and this technique can reduce the generation time of MOSFET model parameter sets because the parameter sets are directly and uniformly determined by the basic circuit performance values without simulation
Keywords :
MOS integrated circuits; MOSFET; circuit analysis computing; integrated circuit modelling; statistical analysis; circuit performance; circuit performance values; model parameter sets; multivariate analysis; process-oriented parameters; worst case MOSFET model; Circuit optimization; Circuit simulation; Computer aided software engineering; Current measurement; Design engineering; Independent component analysis; MOSFET circuits; Parameter extraction; Performance analysis; Semiconductor process modeling;
Conference_Titel :
Statistical Metrology, 1997 2nd International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-3737-9
DOI :
10.1109/IWSTM.1997.629402
