Title :
0.13μm SiGe BiCMOS technology for mm-wave applications
Author :
Avenier, G. ; Chevalier, P. ; Troillard, G. ; Vandelle, B. ; Brossard, F. ; Depoyan, L. ; Buczko, M. ; Boret, S. ; Montusclat, S. ; Margain, A. ; Pruvost, S. ; Nicolson, S.T. ; Yau, K.H.K. ; Gloria, D. ; Dutartre, D. ; Voinigescu, S.P. ; Chantre, A.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MIM devices; MOSFET; bipolar MIMIC; heterojunction bipolar transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; BiCMOS technology; SiGe; complementary double gate oxide MOS transistor; high-linearity MIM capacitor; high-speed medium voltage HBT; inductors; millimeter-wave applications; size 0.13 mum; thick-copper back-end design; transmission lines; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; MIM capacitors; Medium voltage; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Transmission lines; BiCMOS integrated circuits technology; Heterojunction bipolar transistor (HBT); Integrated circuit fabrication; Millimeter wave technology; Silicon Germanium (SiGe);
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662719
