Title :
A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT
Author :
Candra, P. ; Dahlström, M. ; Zierak, M. ; Voegeli, B. ; Watson, K. ; Gray, P. ; He, Z.X. ; Rassel, R.M. ; Von Bruns, S. ; Schmidt, N. ; Camillo-Castillo, R. ; Previty-Kelly, R. ; Gautsch, M. ; Norris, A. ; Gordon, M. ; Chapman, P. ; Hershberger, D. ; Luka
Author_Institution :
Semicond. R&D Center, IBM, Essex Junction, VT
Abstract :
For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5 V CMOS capability and VPNP with fT/fMAX of 15/14 GHz and BVCEO of 6.5 V which can be used to complement high breakdown NPN with fT of 30 GHz and BVceo of 6.0 V.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; heterojunction bipolar transistors; semiconductor device breakdown; BiCMOS technology; CMOS; HBT; SiGe; active device; frequency 125 GHz; frequency 14 GHz; frequency 15 GHz; frequency 30 GHz; frequency 60 GHz; high-breakdown NPN; passive devices; size 0.24 mum; vertical PNP; voltage 6.0 V; voltage 6.5 V; BiCMOS integrated circuits; CMOS technology; Circuit synthesis; Electric breakdown; FETs; Germanium silicon alloys; Implants; Isolation technology; Silicon germanium; USA Councils;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662721
