Title :
Low cost, highly flexible complementary bipolar transistors compatible with 0.18 or 0.13μm CMOS technology
Author :
Preisler, E.J. ; Lao, L. ; Zheng, J. ; Hurwitz, P. ; Racanelli, M.
Author_Institution :
Jazz Semicond., Newport Beach, CA
Abstract :
Both NPN and PNP bipolar transistors are modularly integrated at low cost into standard 0.18 mum and 0.13 mum CMOS process flows. The bipolar modules are of low complexity and thus cost, using only 4 dedicated masks for the NPN and only 2 for the PNP devices. The resulting devices cover an extremely wide range of application space. Devices range from around 2 V BVCEO and 115 GHz FT to 12 V BVCEO and 12 GHz FT. Multiple device types can be co-integrated with the addition of simple implant masking steps.
Keywords :
CMOS integrated circuits; bipolar transistors; CMOS process flows; NPN bipolar transistors; PNP bipolar transistors; complementary bipolar transistors; frequency 115 GHz to 12 GHz; implant masking steps; size 0.13 mum; size 0.18 mum; voltage 2 V to 12 V; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Costs; Etching; Germanium silicon alloys; Implants; Silicon germanium; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662722
