DocumentCode
3237078
Title
An 850 mW X-Band SiGe power amplifier
Author
Andrews, Joel ; Cressler, John D. ; Kuo, Wei-Min Lance ; Grens, Curtis ; Thrivikraman, Tushar ; Phillips, Stan
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
109
Lastpage
112
Abstract
An 850 mW SiGe power amplifier operating at X-Band (8.5-10.5 GHz) frequencies with over 11 dB of gain and 18% PAE is presented. This SiGe PA was implemented in a commercially-available, third-generation 130 nm 200 GHz SiGe BiCMOS platform using a hybrid high-breakdown / high-speed cascode pair to enhance voltage swing.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; electric breakdown; microwave power amplifiers; semiconductor materials; BiCMOS process technology; SiGe; X-band frequencies; efficiency 18 percent; frequency 200 GHz; frequency 8.5 GHz to 10.5 GHz; gain 11 dB; hybrid high-breakdown/high-speed cascode pair; power 850 mW; power amplifier; size 130 nm; voltage swing enhancement; BiCMOS integrated circuits; Frequency; Gain; Germanium silicon alloys; High power amplifiers; Impedance; Power amplifiers; Power generation; Silicon germanium; Voltage; SiGe BiCMOS process technology; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location
Monteray, CA
ISSN
1088-9299
Print_ISBN
978-1-4244-2725-3
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2008.4662724
Filename
4662724
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