DocumentCode :
3237090
Title :
High conversion gain broadband frequency doubler design
Author :
Tang, Wen ; Tang, Song ; He, Qiuyang ; Shao, Zhen-Hai
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2010
fDate :
8-11 May 2010
Firstpage :
536
Lastpage :
538
Abstract :
This paper focuses on the design of frequency doublers operating in the RF and microwave frequency ranges. To reject the fundamental and third harmonic signal over a broadband frequency range, an active balun was employed in the broadband frequency doubler which has resulted in fundamental signal and third harmonics signal rejection better than 12 dB from 12 to 30 GHz input frequency. More than 9.5dBm output power was achieved over the 24-60GHz doubled frequency band for 2dBm input power. The circuit was designed with a 0.15um gate-length InGaAs based on Pseudomorphic High Electron Mobility Transistor (pHEMT) Microwave and Millimeter IC (MMlC) technology.
Keywords :
MMIC; baluns; frequency multipliers; gallium arsenide; indium compounds; power HEMT; InGaAs; MMlC technology; RF frequency range; active balun; broadband frequency range; circuit design; frequency 12 GHz to 30 GHz; high conversion gain broadband frequency doubler design; microwave frequency range; pHEMT microwave and millimeter IC; pseudomorphic high electron mobility transistor; size 0.15 mum; third harmonics signal rejection; Circuits; Electron mobility; Frequency conversion; HEMTs; Impedance matching; Indium gallium arsenide; Microwave frequencies; PHEMTs; Power generation; Radio frequency; balun; broadband; doublers; power amplifier; pseudomorphic high electron mobility transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
Type :
conf
DOI :
10.1109/ICMMT.2010.5525217
Filename :
5525217
Link To Document :
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