Title :
SiGe HBTs featuring fT ≫400GHz at room temperature
Author :
Geynet, B. ; Chevalier, P. ; Vandelle, B. ; Brossard, F. ; Zerounian, N. ; Buczko, M. ; Gloria, D. ; Aniel, F. ; Dambrine, G. ; Danneville, F. ; Dutartre, D. ; Chantre, A.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This paper presents the results of investigations on process thermal budget reduction in order to increase the operation frequency of SiGe HBTs. We describe the variations of DC and AC characteristics of the devices with the spike annealing temperature. Record peak fT values of 410 GHz and 640 GHz are reported at room and cryogenic temperatures respectively.
Keywords :
Ge-Si alloys; annealing; cryogenic electronics; heterojunction bipolar transistors; submillimetre wave transistors; HBT; cryogenic temperature; frequency 410 GHz; frequency 640 GHz; heterojunction bipolar transistor; process thermal budget reduction; spike annealing temperature; temperature 293 K to 298 K; Annealing; Boron; Cryogenics; Electric resistance; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Temperature; Heterojunction bipolar transistor (HBT); activation; cut-off frequency; diffusion; silicon-germanium (SiGe); terahertz; thermal budget;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662727
