Title :
Effect of fluorine-doping on the dielectric strength of thin SiO 2 films formed by plasma-enhanced chemical vapor deposition
Author :
Ishii, K. ; Takami, A. ; Ohki, Y.
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan
Abstract :
Fluorine-doped thin SiO2 films were formed by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF 4 and the intrinsic dielectric strength was measured with a self-healing breakdown technique by applying short-duration voltage pulses. The vacuum-ultraviolet absorption and photoluminescence were observed using synchrotron radiation as a photon source. From the decay profile of luminescence, the microscopic structure of the film was estimated. In the case of the film containing a higher amount of fluorine, the randomness in microscopic structure is smaller and the dielectric strength is higher. From this, it is considered that the higher dielectric strength comes from the relaxation of the structural distortion in the film
Keywords :
dielectric thin films; electric breakdown; electric strength; fluorine; photoluminescence; plasma CVD coatings; semiconductor-insulator boundaries; silicon compounds; ultraviolet spectra; CF4; F-doping; SiO2:F-Si; interlevel dielectric; intrinsic dielectric strength; luminescence decay profile; microscopic structure; photoluminescence; plasma-enhanced chemical vapor deposition; self-healing breakdown technique; short-duration voltage pulses; structural distortion relaxation; synchrotron radiation source; tetraethoxysilane; thin SiO2 films; vacuum-ultraviolet absorption; Breakdown voltage; Chemical vapor deposition; Dielectric breakdown; Dielectric measurements; Dielectric thin films; Microscopy; Plasma chemistry; Plasma measurements; Plasma sources; Pulse measurements;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1996., IEEE 1996 Annual Report of the Conference on
Conference_Location :
Millbrae, CA
Print_ISBN :
0-7803-3580-5
DOI :
10.1109/CEIDP.1996.564560
