A novel broadband class E power amplifier with inductance feedback

Author

Li, Xiang ; Chen, Wenhua ; Zhang, Zhijun ; Feng, Zhenghe ; Xue, Xin ; Dong, Jiaxing

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

fYear

2010

fDate

8-11 May 2010

Firstpage

514

Lastpage

517

Abstract

This paper proposed a new broadband parallel-circuit class E power amplifier(PA) design with feedback inductance. The effect of the feedback inductance on the drain efficiency is studied with an analytical method by using Fourier transformation. Analytical results show that drain efficiency greater than 90% is achieved over a frequency bandwidth of 64% by introducing inductance feedback. Simulation based on a SiC MESFET CRF24060 is presented to verify the validity of our method, which shows a drain efficiency greater than 70% over a bandwidth of 62%.

Keywords

Fourier transforms; Schottky gate field effect transistors; feedback; inductance; power amplifiers; Fourier transformation; SiC MESFET CRF24060; broadband class E power amplifier; broadband parallel-circuit class E power amplifier design; drain efficiency; frequency bandwidth; inductance feedback; Bandwidth; Broadband amplifiers; Equivalent circuits; Feedback; Inductance; Inductors; Parasitic capacitance; Power amplifiers; Silicon carbide; Switches; Class E power amplifier; broadband; feedback inductance; parallel-circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525226

Filename

5525226