Title :
Numerical study on the performance of GaAs MESFET-like oscillator
Author :
Mohammadi, F.A. ; Raahemifar, K. ; Yuan, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ryerson Polytech. Univ., Toronto, Ont., Canada
Abstract :
The principal operation of a monolithic microwave integrated circuits (MMIC) compatible GaAs field effect controlled transferred electron oscillators has been investigated through our new high frequency device simulator by means of a two dimensional full hydrodynamic model. It is shown that the device presents a dynamic negative resistance and it is capable of generating the high frequency power in the millimeter-wave band
Keywords :
Gunn oscillators; III-V semiconductors; MMIC oscillators; circuit simulation; gallium arsenide; integrated circuit modelling; millimetre wave generation; negative resistance; 2D full hydrodynamic model; FECTED; GaAs; III V semiconductor; MESFET-like oscillator; MMIC; dynamic negative resistance; field effect controlled transferred electron oscillators; high frequency device simulator; high frequency power generation; millimeter-wave band; monolithic microwave integrated circuits; Electrons; Field effect MMICs; Frequency; Gallium arsenide; Integrated circuit modeling; MESFETs; Microwave devices; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits;
Conference_Titel :
Electrical and Computer Engineering, 2001. Canadian Conference on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-6715-4
DOI :
10.1109/CCECE.2001.933560
