• DocumentCode
    3237328
  • Title

    Opportunities for silicon at mmWave and Terahertz frequencies

  • Author

    Pfeiffer, U.R. ; Öjefors, E. ; Lisauskas, A. ; Roskos, H.G.

  • Author_Institution
    High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal
  • fYear
    2008
  • fDate
    13-15 Oct. 2008
  • Firstpage
    149
  • Lastpage
    156
  • Abstract
    This paper summarizes opportunities for silicon process technologies at mmwave and terahertz frequencies and demonstrates key building blocks for 94-GHz and 600-GHz imaging arrays. It reviews potential applications and summarizes state-of-the-art terahertz technologies. Terahertz focal-plane arrays (FPAs) for video-rate imaging applications have been fabricated in commercially available CMOS and SiGe process technologies respectively. The 3times5 arrays achieve a responsivity of up to 50 kV/W with a minimum NEP of 400 pW/radicHz at 600 GHz. Images of postal envelopes are presented which demonstrate the potential of silicon integrate 600-GHz terahertz FPAs for future low-cost terahertz camera systems.
  • Keywords
    CMOS analogue integrated circuits; Ge-Si alloys; focal planes; millimetre wave integrated circuits; submillimetre wave integrated circuits; CMOS process technology; SiGe; focal-plane arrays; frequency 600 GHz; frequency 90 GHz; millimeter wave frequency; postal envelopes; silicon process technology; terahertz frequency; video rate imaging; CMOS technology; Cameras; Frequency; Germanium silicon alloys; Integrated circuit technology; Optical imaging; Silicon germanium; Submillimeter wave technology; Ultrafast optics; Water;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
  • Conference_Location
    Monteray, CA
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-2725-3
  • Electronic_ISBN
    1088-9299
  • Type

    conf

  • DOI
    10.1109/BIPOL.2008.4662734
  • Filename
    4662734