DocumentCode
3237328
Title
Opportunities for silicon at mmWave and Terahertz frequencies
Author
Pfeiffer, U.R. ; Öjefors, E. ; Lisauskas, A. ; Roskos, H.G.
Author_Institution
High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal
fYear
2008
fDate
13-15 Oct. 2008
Firstpage
149
Lastpage
156
Abstract
This paper summarizes opportunities for silicon process technologies at mmwave and terahertz frequencies and demonstrates key building blocks for 94-GHz and 600-GHz imaging arrays. It reviews potential applications and summarizes state-of-the-art terahertz technologies. Terahertz focal-plane arrays (FPAs) for video-rate imaging applications have been fabricated in commercially available CMOS and SiGe process technologies respectively. The 3times5 arrays achieve a responsivity of up to 50 kV/W with a minimum NEP of 400 pW/radicHz at 600 GHz. Images of postal envelopes are presented which demonstrate the potential of silicon integrate 600-GHz terahertz FPAs for future low-cost terahertz camera systems.
Keywords
CMOS analogue integrated circuits; Ge-Si alloys; focal planes; millimetre wave integrated circuits; submillimetre wave integrated circuits; CMOS process technology; SiGe; focal-plane arrays; frequency 600 GHz; frequency 90 GHz; millimeter wave frequency; postal envelopes; silicon process technology; terahertz frequency; video rate imaging; CMOS technology; Cameras; Frequency; Germanium silicon alloys; Integrated circuit technology; Optical imaging; Silicon germanium; Submillimeter wave technology; Ultrafast optics; Water;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location
Monteray, CA
ISSN
1088-9299
Print_ISBN
978-1-4244-2725-3
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2008.4662734
Filename
4662734
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