• DocumentCode
    3237392
  • Title

    A thermal design methodology for power SiGe HBTs with non-uniform emitter finger spacing

  • Author

    Jin, D.Y. ; Zhang, W.R. ; Guan, B.L. ; Chen, L. ; Hu, N. ; Xiao, Y. ; Wang, R.Q.

  • Author_Institution
    Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
  • fYear
    2010
  • fDate
    8-11 May 2010
  • Firstpage
    510
  • Lastpage
    513
  • Abstract
    As an effective and feasible method, the technology of non-uniform emitter finger spacing has been used to alleviate the thermal effects and improve the uneven temperature profile in multi-finger power SiGe HBTs. However, for the HBT with dozens of emitter fingers, designing multiple finger spacing values becomes trivial and time-consuming. In the paper, a new thermal design methodology namely Grouping and Adjusting (GA) method is proposed to shorten design time of non-uniform spacing values. Taking a 30-finger HBT for example, the detailed design procedure of non-uniform spacing values is presented, which shows that the peak temperature is lowed by 8.3K, and the maximum temperature difference is improved by 23.5% when compared with the uniform one. Furthermore, three types of the formulas for designing the spacing values are proposed to meet the different requirement of the temperature profile.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; thermal analysis; SiGe; grouping and adjusting method; multifinger power SiGe HBT; nonuniform emitter finger spacing; nonuniform spacing value; thermal design methodology; thermal effect; Design methodology; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Phased arrays; Radar antennas; Silicon germanium; Space technology; Temperature; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-5705-2
  • Type

    conf

  • DOI
    10.1109/ICMMT.2010.5525230
  • Filename
    5525230