DocumentCode
3237392
Title
A thermal design methodology for power SiGe HBTs with non-uniform emitter finger spacing
Author
Jin, D.Y. ; Zhang, W.R. ; Guan, B.L. ; Chen, L. ; Hu, N. ; Xiao, Y. ; Wang, R.Q.
Author_Institution
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
fYear
2010
fDate
8-11 May 2010
Firstpage
510
Lastpage
513
Abstract
As an effective and feasible method, the technology of non-uniform emitter finger spacing has been used to alleviate the thermal effects and improve the uneven temperature profile in multi-finger power SiGe HBTs. However, for the HBT with dozens of emitter fingers, designing multiple finger spacing values becomes trivial and time-consuming. In the paper, a new thermal design methodology namely Grouping and Adjusting (GA) method is proposed to shorten design time of non-uniform spacing values. Taking a 30-finger HBT for example, the detailed design procedure of non-uniform spacing values is presented, which shows that the peak temperature is lowed by 8.3K, and the maximum temperature difference is improved by 23.5% when compared with the uniform one. Furthermore, three types of the formulas for designing the spacing values are proposed to meet the different requirement of the temperature profile.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; thermal analysis; SiGe; grouping and adjusting method; multifinger power SiGe HBT; nonuniform emitter finger spacing; nonuniform spacing value; thermal design methodology; thermal effect; Design methodology; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Phased arrays; Radar antennas; Silicon germanium; Space technology; Temperature; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-5705-2
Type
conf
DOI
10.1109/ICMMT.2010.5525230
Filename
5525230
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