Title :
GaN technologies and developments: Status and trends
Author :
Buchta, M. ; Beilenhoff, K. ; Blanck, H. ; Thorpe, J. ; Behtash, R. ; Heckmann, S. ; Jung, H. ; Ouarch, Z. ; Camiade, M.
Author_Institution :
United Monolithic Semicond. GmbH, Ulm, Germany
Abstract :
Today the European GaN interest is slightly shifting away from academic research to development and industrialization of technology, devices and applications. The recent public funding was started to accelerate the transition from academica to industry on all levels like EC, national and by Space Agencies. In the paper the today´s running projects and the upcoming trends will be described.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor devices; Europe; GaN; academic research; gallium nitride development; gallium nitride technology; high-power RF devices; technology industrialization; Epitaxial growth; Europe; Gallium nitride; Lattices; Radio frequency; Robustness; Silicon carbide; Space technology; Substrates; Temperature sensors;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5525238
