Title :
High and low density complimentary MIM capacitors fabricated simultaneously in advanced RFCMOS and BiCMOS technologies
Author :
He, Z.X. ; Daley, D. ; Bolam, R. ; Vanslette, D. ; Chen, F. ; Cooney, E. ; Mosher, D. ; Feilchenfeld, N. ; Newton, K. ; Eshun, E. ; Rassel, R. ; Benoit, J. ; Coolbaugh, D. ; St Onge, S. ; Dunn, J.
Author_Institution :
IBM Corp., Essex Junction, VT
Abstract :
Two MIM capacitors with capacitance density of 11 and 0.48 fF/um2 were fabricated simultaneously using IBM-s 0.13 um SiGe 8 WL BiCMOS process. Results from DC parametric measurement indicate that these two capacitors compliment each other extremely well.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MIM devices; capacitors; radiofrequency integrated circuits; semiconductor materials; BiCMOS technologies; DC parametric measurement; SiGe; advanced RFCMOS; capacitance density; low density complimentary MIM capacitor; size 0.13 mum; BiCMOS integrated circuits; Capacitance; Copper; Costs; Dielectric films; Dielectric materials; Fabrication; MIM capacitors; Silicon; Voltage-controlled oscillators; Capacitor; Complimentary; HiK; High Voltage; MIM; RFCMOS; SiGe BiCMOS;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662746
