Title :
3.6mW, 30dB gain preamplifiers for an FM-UWB receiver
Author :
Zhao, Yi ; Van Veenendaal, Gerrit ; Bonakdar, Hamid ; Gerrits, John F M ; Long, John R.
Author_Institution :
Electron. Res. Lab./DIMES, Delft Univ. of Technol., Delft
Abstract :
Two low-power, high-gain preamplifiers designed for a 7.2-7.7GHz (high band) FM-UWB receiver in 0.25mum SiGe:C-BiCMOS technology are described. Each preamplifier has single-ended input/differential outputs and is aimed at low-power, low data rate applications. Both amplifiers consume 3.6mW from a 1.8V supply. The maximum measured voltage gain is Gt30dB with 500MHz bandwidth for both designs, and they remain functional down to 1.4V supply voltage. The first amplifier (with active input balun) realizes 5.7dB measured 50Omega noise figure (NF), while the second amplifier (with passive output balun) has 4.3dB measured (50Omega) NF. This performance is sufficient to realize better than -80dBm sensitivity in a FM-UWB receiver dissipating less than 10mW at 100kbit/s data rate.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; preamplifiers; transceivers; BiCMOS technology; FM-UWB receiver; SiGe; frequency 500 MHz; frequency 7.2 GHz to 7.7 GHz; gain preamplifiers; noise figure; power 3.6 mW; size 0.25 mum; voltage 1.4 V; voltage 1.8 V; Circuits; Demodulation; Frequency modulation; Impedance matching; Noise figure; Noise measurement; Preamplifiers; Signal processing; Ultra wideband technology; Voltage; FM-UWB; SiGe:C-BiCMOS technology; high-band ultrawideband; high-gain low-power preamplifier; low data rate; wireless personal area networking;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662747
