Monolithically integrated GaAs-based and InP-based front-end photoreceivers

Author

Li, W.Q. ; Zebda, Y. ; Bhattacharya, P.K. ; Pavlidis, D. ; Oh, J.E. ; Pamulapati, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1989

fDate

7-9 Aug 1989

Firstpage

353

Lastpage

361

Abstract

Two different integration schemes for front-end optical receivers have been demonstrated for GaAs- and InP-based material systems. An InP-based p-i-n FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g_m=450 mS/mm and f_T=9 GHz. The GaAs-based planar structure consists of a modulated-barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200, and the FET performance is characterized by g_m=250 mS/mm, f_T=12 GHz, and f_max=21 GHz

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; integrated optoelectronics; optical communication equipment; photodiodes; receivers; semiconductor epitaxial layers; 12 GHz; 21 GHz; 250 mS; 450 mS; 9 GHz; GaAs photoreceivers; InP; MISFET; MODFET; cutoff frequency; doped channel FET; epitaxial layers; extrinsic transconductance; front-end optical receivers; integration schemes; modulated-barrier photodiode; optical gain; optoelectronic integrated circuit; p-i-n FET vertically integrated circuit; planar structure; semiconductors; Etching; FETs; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Integrated circuit interconnections; MODFET circuits; MODFET integrated circuits; PIN photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/CORNEL.1989.79853

Filename

79853