Title :
A novel empirical model for SiC MESFETs with self-heating effect
Author :
Li, Oupeng ; Huang, Wen ; Guo, Yunchuan ; Chen, Yongbo ; Xu, Ruimin
Author_Institution :
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, a novel empirical model based on Angelov model for SiC MESFETs with self-heating effect is presented. Modifications of drain current and nonlinear capacitive model are proposed to adapt to the measured date without the thermal subcircuit. These new models could simplify the equivalent circuit topology and are easier to implement in CAD simulation tools. A good agreement has been obtained between simulated and measured results.
Keywords :
CAD; Schottky gate field effect transistors; equivalent circuits; silicon compounds; Angelov model; CAD simulation tool; SiC; SiC MESFET; drain current; empirical model; equivalent circuit topology; nonlinear capacitive model; self-heating effect; thermal subcircuit; Capacitance; Circuit simulation; Equivalent circuits; MESFETs; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance; Transconductance; Voltage;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5525241
