DocumentCode
3237596
Title
A novel empirical model for SiC MESFETs with self-heating effect
Author
Li, Oupeng ; Huang, Wen ; Guo, Yunchuan ; Chen, Yongbo ; Xu, Ruimin
Author_Institution
EHF Key Lab. of Fundamental Sci., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2010
fDate
8-11 May 2010
Firstpage
470
Lastpage
472
Abstract
In this paper, a novel empirical model based on Angelov model for SiC MESFETs with self-heating effect is presented. Modifications of drain current and nonlinear capacitive model are proposed to adapt to the measured date without the thermal subcircuit. These new models could simplify the equivalent circuit topology and are easier to implement in CAD simulation tools. A good agreement has been obtained between simulated and measured results.
Keywords
CAD; Schottky gate field effect transistors; equivalent circuits; silicon compounds; Angelov model; CAD simulation tool; SiC; SiC MESFET; drain current; empirical model; equivalent circuit topology; nonlinear capacitive model; self-heating effect; thermal subcircuit; Capacitance; Circuit simulation; Equivalent circuits; MESFETs; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4244-5705-2
Type
conf
DOI
10.1109/ICMMT.2010.5525241
Filename
5525241
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