Title :
A mixed signal wide-band BiCMOS frequency synthesizer for DVB application
Author :
Yu, Peng ; Yan, Jun ; Shi, Yin ; Dai, Fa Foster
Author_Institution :
Suzhou-CAS Semicond. Integrated Technol. Res. Center, Suzhou
Abstract :
This paper presents a BiCMOS frequency synthesizer covering frequency range from 500 MHz to 2175 MHz which is fully compatible with DVB-S application. The frequency synthesizer consists of monolithic VCOs, utilizing on-chip symmetric inductor, high speed CML divider built with high performance BJT, and can achieve -80 dBc/Hz, -100 dBc/Hz, -123 dBc/Hz phase noise at 1 KHz, 100 KHz and 1 MHz carrier frequency offset, respectively. The 4 VCOs, which can be tuned from 2 GHz to 4.3 GHz with 20 % tuning range each and a maxim KVCO of 200 MHz/V, is divided by two or four to synthesis the desired DVB-S L-band (0.95-2.15 GHz) or other UHF-band frequency. Measure results show that this design works well over a temperature variation from 0degC to 85degC. The design is implemented with a 0.35 mum SiGe BiCMOS technology.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar transistors; frequency synthesizers; semiconductor materials; voltage-controlled oscillators; BJT; BiCMOS; SiGe; carrier frequency; frequency 500 MHz to 2175 MHz; frequency synthesizer; mixed signal; monolithic VCO; on-chip symmetric inductor; phase noise; size 0.35 mum; BiCMOS integrated circuits; Digital video broadcasting; Frequency conversion; Frequency synthesizers; Inductors; L-band; Phase noise; Temperature; Tuning; Wideband; BiCMOS; CML; DVB; PLL; SiGe; VCO; frequency synthesizer;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2008. BCTM 2008. IEEE
Conference_Location :
Monteray, CA
Print_ISBN :
978-1-4244-2725-3
Electronic_ISBN :
1088-9299
DOI :
10.1109/BIPOL.2008.4662750