DocumentCode :
3237612
Title :
W-band inductive high order frequency multiplier based on silicon avalanche diode
Author :
Zhao, Minghua ; Fan, Yong ; He, Zongrui ; Lin, Xianqi ; Zhang, Bo
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2010
fDate :
8-11 May 2010
Firstpage :
473
Lastpage :
475
Abstract :
An investigation of millimeter wave high order frequency multiplier based on the inductive nonlinearity of avalanche diode is presented. The operation of high order frequency multiplication is introduced and the high order harmonics generation character under external RF field modulation is analyzed. In experiment, the output power of 6.2 mW and 9.55 mW are obtained at output frequency of 94.05 GHz and 100.32 GHz with 15th and 16th multiplication order. The phase noise character is also according to the phase noise formula of frequency multiplier.
Keywords :
avalanche diodes; frequency multipliers; harmonic generation; millimetre wave diodes; phase noise; RF field modulation; W-band inductive high order frequency multiplier; frequency 100.32 GHz; frequency 94.05 GHz; high order harmonics generation; inductive nonlinearity; millimeter wave high order frequency multiplier; phase noise; power 6.2 mW; power 9.55 mW; silicon avalanche diode; Charge carrier processes; Diodes; Equations; Frequency conversion; Ionization; Millimeter wave technology; Phase noise; Power harmonic filters; Radio frequency; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
Type :
conf
DOI :
10.1109/ICMMT.2010.5525242
Filename :
5525242
Link To Document :
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