Improvement on de-embedding accuracy by removing parasitics of short standards

In the de-embedding methodologies used to characterize semiconductor devices on Si substrates, the short standards are assumed to be perfect. However, in practice, there are parasitics associated with the connections to the ground of the short standards. The de-embedded error caused by the parasitics is critical to devices sensitive to small variation of series components such as small resistor and high Q inductors. A method to remove the parasitics of short standards from the de-embedding calculation and improve the de-embedded results is developed.