DocumentCode :
3237629
Title :
Design and realization of a Ka band subharmonical mixer using self-designed Schottky diodes
Author :
Mou, Jinchao ; Yu, Weihua ; Yuan, Yong ; Lv, Xin
Author_Institution :
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
fYear :
2010
fDate :
8-11 May 2010
Firstpage :
463
Lastpage :
466
Abstract :
This paper presents the design and realization of a Ka band subharmonically pumped mixer using self-fabricated Schottky diodes. First, the design and fabrication of GaAs Schottky diode with the cutoff frequency of 650 GHz was introduced. Then the mixer´s design was presented which consists of two parts: design of the passive linear part and optimization of the total mixer. Finally, the fabricated mixer and measured results was given, the conversion loss of which shows the validity of the fabricated Schottky diodes.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; microwave mixers; GaAs Schottky diode; Ka band subharmonically pumped mixer; frequency 650 GHz; optimization; self-designed Schottky diodes; Band pass filters; Cutoff frequency; Design optimization; Frequency conversion; Gallium arsenide; Mixers; RF signals; Radio frequency; Scattering parameters; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
Type :
conf
DOI :
10.1109/ICMMT.2010.5525243
Filename :
5525243
Link To Document :
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