A low cost 3.6 V single-supply GaAs power amplifier IC for the 1.9-GHz DECT system

Author

Griffiths, J. ; Sadhir, V.

Author_Institution

ITT GTC, Roanoke, VA, USA

fYear

1995

fDate

17-19 May 1995

Firstpage

37

Lastpage

40

Abstract

A GaAs power amplifier IC in a SOIC-16 plastic package has been developed for the 1.9 GHz Digital European Cordless Telephone (DECT) system. The power amplifier consists of two stages with all matching structures on chip and has a total area of 1.84 mm². At -2 dBm input power and 3.6 volts, the typical power amplifier achieves 26 dBm output power with 30% power-added efficiency, while operating from a single power supply in the SOIC-16 plastic package

Keywords

III-VI semiconductors; MMIC power amplifiers; UHF power amplifiers; cordless telephone systems; digital radio; gallium arsenide; integrated circuit design; integrated circuit packaging; integrated circuit testing; plastic packaging; radio equipment; telecommunication power supplies; 1.9 GHz; 1.9-GHz DECT system; 3.6 V; 30 percent; Digital European Cordless Telephone; GaAs; SOIC-16 plastic package; input power; low cost 3.6 V single-supply GaAs power amplifier IC; output power; power supply; power-added efficiency; Costs; Digital integrated circuits; Gallium arsenide; Minimization; Packaging; Plastics; Power amplifiers; Power generation; Telephony; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Systems Conference, 1995. Conference Proceedings., IEEE NTC '95

Conference_Location

Orlando, FL

Print_ISBN

0-7803-2591-1

Type

conf

DOI

10.1109/NTCMWS.1995.522859

Filename

522859