Title :
TCAD calibration framework for accurate prediction of scaled CMOS characteristics
Author :
Sato, Hisako ; Aoyama, Kimiko ; Tsuneno, Katsumi ; Masuda, Hiroo
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
A novel TCAD calibration methodology has been presented to improve the accuracy using the Response Surface Method. It includes: (1) reduction of simulation works (2) the transformation method of variables (3) global calibration. The Hierarchical Response Surface Method (HRSM) has reduced the simulation works to about 50% when the variables are added. A RSF (Response Surface Function) was obtained by the proper transformation of back bias voltage within the error of 0.02 V. The RSF was calibrated globally using the experimental data. The TCAD calibration was applied to obtain the precise prediction of a sub-micron CMOS process and device design. The predicted threshold voltage was verified within the average error of 0.002 V
Keywords :
CMOS integrated circuits; VLSI; calibration; circuit CAD; circuit analysis computing; integrated circuit design; TCAD calibration framework; back bias voltage; device design; global calibration; hierarchical response surface method; scaled CMOS characteristics; submicron CMOS process; threshold voltage; transformation method; CMOS process; Calibration; Databases; Design methodology; Equations; Predictive models; Process design; Response surface methodology; Statistical analysis; Threshold voltage;
Conference_Titel :
Statistical Metrology, 1997 2nd International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-3737-9
DOI :
10.1109/IWSTM.1997.629407
