Title :
Optically activated charge domain model for high-gain GaAs photoconductive switches
Author :
Liang, Zhen-xian ; Shi, Wei ; Feng, Jun ; Xu, Chuan-xiang
Author_Institution :
Inst. of Electr. Insulation, Xi´´an Jiaotong Univ., China
Abstract :
A model for theoretical analysis of nonlinear (or high gain) mode of photoconductive semiconductor switches (PCSS´s) has been proposed. The switching transition of high-gain PCSS´s can be described with an optically activated luminous charge domain. The formation and radiation transit, accumulation of the charge domain are related with the triggering and sustaining phrases of PCSS´s, respectively
Keywords :
III-V semiconductors; gallium arsenide; photoconducting switches; semiconductor device models; GaAs; nonlinear high-gain mode; optically activated luminous charge domain model; photoconductive semiconductor switch; switching transition; Cathodes; Gallium arsenide; High speed optical techniques; Nonlinear optical devices; Nonlinear optics; Optical pulses; Optical switches; Photoconducting devices; Photoconductivity; Pulse power systems;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1996., IEEE 1996 Annual Report of the Conference on
Conference_Location :
Millbrae, CA
Print_ISBN :
0-7803-3580-5
DOI :
10.1109/CEIDP.1996.564584
