Title :
Power generation of millimeter-wave diamond IMPATT diodes
Author :
Mock, P.M. ; Trew, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The results of a large-signal simulation of diamond IMPATT (impact avalanche and transit time) diodes are presented. The purpose of this investigation is to determine the potential of diamond IMPATTs as millimeter-wave power generators. This computer simulation is used to compare the performance of diamond IMPATTs with that of similar Si, GaAs, and InP devices. In addition, diamond IMPATT output power and power conversion efficiency are compared with experimental results on Si, GaAs and InP IMPATT and Gunn diodes. Thermal effects on the RF performance are investigated by means of an area-current-density plane analysis. The results indicate that diamond IMPATTs could produce power conversion efficiencies comparable to those of Si and GaAs. Due to their higher operating voltages and thermal conductivity, diamond IMPATTs could produce output power much greater than that of the other materials at frequencies below 100 GHz. At higher frequencies, diamond IMPATT performance is limited by its electrical properties and produces powers comparable to those of Si devices
Keywords :
IMPATT diodes; diamond; digital simulation; microwave generation; semiconductor device models; 35 to 220 GHz; C; GaAs; Gunn diodes; InP; RF performance; Si; area-current-density plane analysis; computer simulation; large-signal simulation; millimeter-wave diamond IMPATT diodes; millimeter-wave power generators; power conversion efficiency; thermal conductivity; thermal effect; Computational modeling; Computer simulation; Diodes; Frequency; Gallium arsenide; Gunn devices; Indium phosphide; Power conversion; Power generation; Thermal conductivity;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
DOI :
10.1109/CORNEL.1989.79856
