A power bipolar junction transistor model describing the static and the dynamic behavior

Author

Xu, C.H. ; Schröder, D.

Author_Institution

Tech. Univ., Munich, West Germany

fYear

1989

fDate

26-29 Jun 1989

Firstpage

314

Abstract

The power bipolar junction transistor (PBJT) is studied. The main interest is concentrated on the charge in the collector layer, which dominates the characteristics of the device. Based on the partial differential equations of semiconductor physics, ordinary differential equations for a one-dimensional model are derived for a PBJT with fine cell structure. The equations consider recombination, charging, and discharging processes in the collector layer. A network model for the PBJT is derived by adding these equations to the standard model. The model is implemented in IG-SPICE. The static behavior, like quasi-saturation, and the dynamic behavior, including turn off under a strong drive condition, can be simulated and analyzed. The simulation results correlate well with the measurement

Keywords

bipolar transistors; partial differential equations; power transistors; semiconductor device models; IG-SPICE; PBJT; charging; discharging; dynamic behavior; fine cell structure; partial differential equations; power bipolar junction transistors; quasi-saturation; recombination; static behavior; turn off; Analytical models; Circuit simulation; Current density; Difference equations; Differential equations; Parameter extraction; Partial differential equations; Poisson equations; Radiative recombination; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE

Conference_Location

Milwaukee, WI

Type

conf

DOI

10.1109/PESC.1989.48504

Filename

48504