DocumentCode
3238576
Title
Improvement of RSF for a statistical design of lithographic process
Author
Goda, A. ; Misaka, A. ; Umimoto, H. ; Odanaka, S.
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Japan
fYear
1997
fDate
35589
Firstpage
74
Lastpage
77
Abstract
A statistical design method for lithographic process using the RSM (Response Surface Method) is developed. The RSF for CD (Critical Dimension) in optical lithography is constructed by the 4th order polynomial with coefficients described as a function of the gap. The accuracy of RSF for CD in the lithography is discussed
Keywords
photolithography; polynomials; proximity effect (lithography); statistical analysis; 4th order polynomial; critical dimension; lithographic process; response surface method; statistical design method; Design methodology; Least squares methods; Lithography; Optical sensors; Optical surface waves; Polynomials; Process design; Proximity effect; Resists; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Statistical Metrology, 1997 2nd International Workshop on
Conference_Location
Kyoto
Print_ISBN
0-7803-3737-9
Type
conf
DOI
10.1109/IWSTM.1997.629417
Filename
629417
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