DocumentCode :
3238616
Title :
Successful modeling of a semiconductor R&D facility
Author :
Tullis, Barclay ; Mehrotra, Vijay ; Zuanich, Dick
Author_Institution :
Hewlett Packard Co., Palo Alto, CA, USA
fYear :
1990
fDate :
21-23 May 1990
Firstpage :
26
Lastpage :
32
Abstract :
A chief limitation on process development cycle time is the time it takes to process wafers. Hewlett Packard Co. has shortened this time by using discrete-event simulation of its R&D fabrication facility to better understand its capacity limitations and to analyze how changes affect the cycle times of complete wafer processing. Results include Pareto charts of equipment according to the impacts that changes in their mean-time-between-failure (MTBF) and/or mean-time-to-repair (MTTR) parameters have on wafer cycle times. Results also include a Pareto chart of operator skills and their impact on cycle times; that is, one can know how much effect there is on cycle times when staffing is changed to satisfy needs for a specific operator skill. Similarly, it is possible to evaluate effects of shift schedules and end-of-shift wafer processing decisions. Furthermore, simulation reveals the relative benefits of applying different dispatching rules (such as first in, first out, shortest-processing time, least-work-in-next queue, etc.) and of different inventory-level control policies
Keywords :
integrated circuit manufacture; production control; research and development management; Hewlett Packard; MTBF; MTTR; Pareto chart of operator skills; Pareto charts of equipment; R&D fabrication facility; capacity limitations; cycle times of complete wafer processing; discrete-event simulation; dispatching rules; effects of shift schedules; end-of-shift wafer processing decisions; first in, first out; inventory-level control policies; least-work-in-next queue; limitation on process development cycle time; mean-time-between-failure; mean-time-to-repair; modeling; processing simulation; semiconductor R&D facility; shortest-processing time; staffing changes effects; time to process wafers; wafer cycle times; CMOS technology; Computational modeling; Computer languages; Computer simulation; Consumer electronics; Discrete event simulation; Fabrication; Integrated circuit technology; Research and development; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Science Symposium, 1990. ISMSS 1990., IEEE/SEMI International
Conference_Location :
Burlingame, CA
Type :
conf
DOI :
10.1109/ISMSS.1990.66131
Filename :
66131
Link To Document :
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